Vishay Intertechnology, Inc. N-Channel MOSFET Transistor SIR818DP-T1-GE3

N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel Product overview: SIR818DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR818DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 30V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

Manufacturer: Vishay
Win Source Part Number: 028765-SIR818DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 95nC @ 10V
Max Input Capacitance: 3660pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance