Vishay Intertechnology, Inc. 25V 20A MOSFET Transistor SIR808DP-T1-GE3

MOSFET N-CH 25V 20A PPAK SO-8 Product overview: SIR808DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR808DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 25V 20A (Tc) 29.8W (Tc) Surface Mount PowerPAK® SO-8

Manufacturer: Vishay
Win Source Part Number: 211729-SIR808DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 29.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 22.8nC @ 10V
Max Input Capacitance: 815pF @ 12.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.9 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance