N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 100V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 100V 60A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 1096481-SIR804DP-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 76nC @ 10V
Max Input Capacitance: 2450pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.2 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
MOSFET, N CH, 100V, 60A, POWERPAK SO-8; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
MOSFET, N CH, 100V, 60A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes
Trans MOSFET N-CH 100V 20.8A 8-Pin PowerPAK SO T/R
MOSFET N-CH 100V 60A PPAK SO-8
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIR804DP-T1-GE3DKR-ND | SIR804DP-T1-GE3 | 1096481-SIR804DP-T1-GE3 | SIR804DP-T1-GE3 | 94T2657 | 86R3807 | 880-SIR804DP-T1-GE3 | SIR804DP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR804DP-T1-GE3 | MOSFET | Mosfet, N Ch, 100V, 60A, Powerpak So-8; Channel Type Vishay | Mosfet, N Ch, 100V, 60A, Powerpak So-8, Full Reel; Channel Type Vishay | Trans MOSFET N-CH 100V 20.8A 8-Pin PowerPAK SO T/R | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | TO-3; SO-8 | TO-3; SO-8 | Surface Mount | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 60000 milliamps | 60000 milliamps | 60000 milliamps |
