Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR802DP-T1-GE3 SIR802DP-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 1250008-SIR802DP-T1-GE3
Series: TrenchFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: PowerPAK SO-8
Channel Type Type: N
Drain Source Voltage: 20V
Vgs(th) (Maximum) @ Id: 1.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1785pF @ 10V
Vgs (Maximum): ±12V
Power Dissipation (Maximum): 4.6W (Ta), 27.7W (Tc)
Rds On (Maximum) @ Id, Vgs: 5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): TPCC8007(TE12L,Q); TPCC8007; SiRA14DP-T1-GE3;
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 30A PPAK SO-8 Product overview: SIR802DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR802DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 20V 30A (Tc) 4.6W (Ta), 27.7W (Tc) Surface Mount PowerPAK® SO-8

MOSFET N-CH 20V 30A PPAK SO-8