N-Channel 20V 50.2A (Ta), 177A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 20V 50.2A (Ta), 177A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 20V 50.2A (Ta), 177A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
Trans MOSFET N-CH 20V 50.2A 8-Pin PowerPAK SO EP T/R Product overview: SIR800ADP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 50.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 50.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR800ADP-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 895060-SIR800ADP-T1-
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 20 V 50.2A (Ta), 177A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIR800
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 38 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIR800ADP-T1-GE3DKR,
MOSFET, N-CH, 177A, 20V, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:177A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.00112ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power RoHS Compliant: Yes
MOSFET 20V Vds 12V Vgs PowerPAK SO-8
MOSFET N-CH 20V 50.2A/177A PPAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIR800ADP-T1-GE3TR-ND | 278-SIR800ADP-T1-GE3 | 895060-SIR800ADP-T1-GE3 | 99AC9576 | SIR800ADP-T1-GE3 | SIR800ADP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 20V 50.2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR800ADP-T1-GE3 | Mosfet, N-Ch, 177A, 20V, Powerpak So; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | SO-8; PowerPAK® SO-8 | Tape and Reel | SO-8; SOT3; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 20 volts | |||||
| Transconductance | 0.0600 kS |
