Win Source Part Number: 1005638-SIR680LDP-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 31.8A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7250 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIR680LDP-T1-RE3
Base Product Number: SIR680
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Trans MOSFET N-CH 80V 31.8A 8-Pin PowerPAK SO EP T/R Product overview: SIR680LDP-T1-RE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 31.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 31.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR680LDP-T1-RE3
N-Channel 80V 31.8A (Ta), 130A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 31.8A (Ta), 130A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 31.8A (Ta), 130A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
MOSFET, N-CH, 80V, 130A, POWERPAK SO ROHS COMPLIANT: YES
MOSFET N-CH 80V 31.8A/130A PPAK
MOSFET N-CH 80V 31.8A/130A PPAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1005638-SIR680LDP-T1-RE3 | 278-SIR680LDP-T1-RE3 | 2105003P | 2105003 | 742-SIR680LDP-T1-RE3DKR-ND | 91AH9016 | SIR680LDP-T1-RE3 | SIR680LDP-T1-RE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 80V 31.8A MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 80V, 130A, Powerpak So Rohs Compliant Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 6250 to 104000 milliwatts | 104 milliwatts | 6250 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SO-8; SOT3 | Tape and Reel | SO-8; SO-8 | SO-8; Powerpak so-8 | SO-8; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 |
| MOSFET Operating Mode | Enhancement |
