Trans MOSFET N-CH 80V 30.7A 8-Pin PowerPAK SO EP T/R Product overview: SIR680ADP-T1-RE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 30.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 30.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR680ADP-T1-RE3
N-Channel 80V 30.7A (Ta), 125A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 30.7A (Ta), 125A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 30.7A (Ta), 125A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1167306-SIR680ADP-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIR680ADP-T1-RE3
Base Product Number: SIR680
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
MOSFET, N-CH, 80V, 125A, 150DEG C, 104W ROHS COMPLIANT: YES
MOSFET N-CH 80V 30.7A/125A PPAK
MOSFET N-CH 80V 30.7A/125A PPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIR680ADP-T1-RE3 | 742-SIR680ADP-T1-RE3CT-ND | 1167306-SIR680ADP-T1-RE3 | 42AH1976 | SIR680ADP-T1-RE3 | SIR680ADP-T1-RE3 |
| Product Name | 80V 30.7A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 80V, 125A, 150Deg C, 104W Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 80 volts | 80 volts | ||||
| Transconductance | 0.0680 kS | |||||
| PD | 104 milliwatts | 6250 to 104000 milliwatts | 6250 milliwatts |
