N-Channel 60V 60A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8
MOSFET 60V 4.8mOhm@10V 60A N-CH Product overview: SIR670DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.8mOhm, 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.8mOhm, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR670DP-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 794407-SIR670DP-T1-G
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Family Name: SiR670DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PowerPAK SO-8
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.8V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2815pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 5W (Ta), 56.8W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): FDMS86569-F085; DMT6005LPS-13; RS1L180GNTB; DMTH6005LPSQ-13;
Introduction Date: July 08, 2013
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 60A PPAK SO-8
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 60V 60A PPAK SO-8
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIR670DP-T1-GE3TR-ND | 278-SIR670DP-T1-GE3 | 794407-SIR670DP-T1-GE3 | SIR670DP-T1-GE3 | SIR670DP-T1-GE3 | SIR670DP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 60V 4.8mOhm 10V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR670DP-T1-GE3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | Surface Mount | ||
| PD | 56800 milliwatts | 5000 to 56800 milliwatts | 5000 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
