Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR662DP-T1-GE3 SIR662DP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 134720-SIR662DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Family Name: SiR662DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 96nC @ 10V Max Input Capacitance: 4365pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): CSD18532Q5BT; CSD18532Q5B; DMTH6004SPSQ-13; DMTH6004SPS-13; Introduction Date: February 14, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial
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Description
Manufacturer: Vishay Win Source Part Number: 134720-SIR662DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Family Name: SiR662DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 96nC @ 10V Max Input Capacitance: 4365pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): CSD18532Q5BT; CSD18532Q5B; DMTH6004SPSQ-13; DMTH6004SPS-13; Introduction Date: February 14, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR662DP-T1-GE3 - 134720-SIR662DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR662DP-T1-GE3
134720-SIR662DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR662DP-T1-GE3 134720-SIR662DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 134720-SIR662DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Family Name: SiR662DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 96nC @ 10V Max Input Capacitance: 4365pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): CSD18532Q5BT; CSD18532Q5B; DMTH6004SPSQ-13; DMTH6004SPS-13; Introduction Date: February 14, 2011 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Limited Application Field: Used in Power Management, Industrial

Manufacturer: Vishay
Win Source Part Number: 134720-SIR662DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Family Name: SiR662DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 96nC @ 10V
Max Input Capacitance: 4365pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): CSD18532Q5BT; CSD18532Q5B; DMTH6004SPSQ-13; DMTH6004SPS-13;
Introduction Date: February 14, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial

Buy Now Datasheet
Singapore
60V 60A MOSFET Transistor
278-SIR662DP-T1-GE3
60V 60A MOSFET Transistor 278-SIR662DP-T1-GE3
60V 60A N-CH MOSFET, 2.7mR Rds(on), PowerPAK SO Product overview: SIR662DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR662DP-T1-GE3 can be used for catalog matching and distributor lookup.

60V 60A N-CH MOSFET, 2.7mR Rds(on), PowerPAK SO Product overview: SIR662DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR662DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIR662DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIR662DP-T1-GE3
Single FETs, MOSFETs SIR662DP-T1-GE3
MOSFET N-CH 60V 60A PPAK SO-8

MOSFET N-CH 60V 60A PPAK SO-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SIR662DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR662DP-T1-GE3DKR-ND
Single FETs, MOSFETs SIR662DP-T1-GE3DKR-ND
N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR662DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR662DP-T1-GE3CT-ND
Single FETs, MOSFETs SIR662DP-T1-GE3CT-ND
N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR662DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR662DP-T1-GE3TR-ND
Single FETs, MOSFETs SIR662DP-T1-GE3TR-ND
N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Mosfet, N Channel, 60V, 60A, Powerpakso-8; Channel Type Vishay - 83T3534 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 60V, 60A, Powerpakso-8; Channel Type Vishay
83T3534
Mosfet, N Channel, 60V, 60A, Powerpakso-8; Channel Type Vishay 83T3534
MOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 100 A, 60 V, 0.0022 Ohm, 10 V, 1 V Rohs Compliant Vishay - 64T4039 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 100 A, 60 V, 0.0022 Ohm, 10 V, 1 V Rohs Compliant Vishay
64T4039
Mosfet Transistor, N Channel, 100 A, 60 V, 0.0022 Ohm, 10 V, 1 V Rohs Compliant Vishay 64T4039
MOSFET Transistor, N Channel, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 60V, 60A, Powerpakso-8, Full Reel; Channel Type Vishay - 65T1666 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 60V, 60A, Powerpakso-8, Full Reel; Channel Type Vishay
65T1666
Mosfet, N Channel, 60V, 60A, Powerpakso-8, Full Reel; Channel Type Vishay 65T1666
MOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes

MOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR662DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR662DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR662DP-T1-GE3
MOSFET N-CH 60V 60A PPAK SO-8

MOSFET N-CH 60V 60A PPAK SO-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET

MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 134720-SIR662DP-T1-GE3 278-SIR662DP-T1-GE3 SIR662DP-T1-GE3 SIR662DP-T1-GE3DKR-ND 83T3534 64T4039 65T1666 SIR662DP-T1-GE3 SIR662DP-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR662DP-T1-GE3 60V 60A MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N Channel, 60V, 60A, Powerpakso-8; Channel Type Vishay Mosfet Transistor, N Channel, 100 A, 60 V, 0.0022 Ohm, 10 V, 1 V Rohs Compliant Vishay Mosfet, N Channel, 60V, 60A, Powerpakso-8, Full Reel; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 6250 to 104000 milliwatts 104000 milliwatts 6250 milliwatts 104000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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