Manufacturer: Vishay
Win Source Part Number: 134720-SIR662DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Family Name: SiR662DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 96nC @ 10V
Max Input Capacitance: 4365pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.7 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): CSD18532Q5BT; CSD18532Q5B; DMTH6004SPSQ-13; DMTH6004SPS-13;
Introduction Date: February 14, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
60V 60A N-CH MOSFET, 2.7mR Rds(on), PowerPAK SO Product overview: SIR662DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR662DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 60A PPAK SO-8
N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
MOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V RoHS Compliant: Yes
MOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:104W RoHS Compliant: Yes
MOSFET N-CH 60V 60A PPAK SO-8
MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 134720-SIR662DP-T1-GE3 | 278-SIR662DP-T1-GE3 | SIR662DP-T1-GE3 | SIR662DP-T1-GE3DKR-ND | 83T3534 | 64T4039 | 65T1666 | SIR662DP-T1-GE3 | SIR662DP-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR662DP-T1-GE3 | 60V 60A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N Channel, 60V, 60A, Powerpakso-8; Channel Type Vishay | Mosfet Transistor, N Channel, 100 A, 60 V, 0.0022 Ohm, 10 V, 1 V Rohs Compliant Vishay | Mosfet, N Channel, 60V, 60A, Powerpakso-8, Full Reel; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | |||||||
| PD | 6250 to 104000 milliwatts | 104000 milliwatts | 6250 milliwatts | 104000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |