The SIR638DP-T1-GE3 is an N-Channel MOSFET designed for applications requiring high efficiency and performance. It features a maximum drain-source voltage (V_DS) of 40 V and a continuous drain current (I_D) rating of 100 A at a case temperature of 25 ¬8C. The device is housed in a PowerPAK¬Æ SO-8 package, which is suitable for surface mount applications. This MOSFET exhibits a low on-state resistance (R_DS(on)) of 0.00088 Oc at a gate-source voltage (V_GS) of 10 V, optimizing its switching characteristics with a gate charge (Q_g) of 63 nC. It is tested for 100% R_g and UIS, ensuring reliability in various applications. The product is suitable for synchronous rectification, ORing, high power density DC/DC converters, and DC/AC inverters. The operating temperature range for the SIR638DP-T1-GE3 is from -55 ¬8C to +150 ¬8C, making it versatile for different environmental conditions. It is also lead (Pb)-free and halogen-free, aligning with modern environmental standards. The device is available in bulk packaging, with a quantity of 3000 per package.
N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 933830-SIR638DP-T1-G
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 40 V 100A (Tc) 104W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIR638
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIR638DP-T1-GE3TR, SIR638DP-T1-GE3CT, SIR638DP-T1-GE3DKR
Power Field-Effect Transistor, Product overview: SIR638DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR638DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 40V 100A PPAK SO-8
MOSFET, N-CH, 40V, 100A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):730µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.3V; Power RoHS Compliant: Yes
MOSFET N-CH 40V 100A PPAK SO-8
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIR638DP-T1-GE3CT-ND | 933830-SIR638DP-T1-GE3 | 278-SIR638DP-T1-GE3 | SIR638DP-T1-GE3 | 61AC1926 | SIR638DP-T1-GE3 | SIR638DP-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR638DP-T1-GE3 | MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 100A, Powerpak So; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | TO-3 | Surface Mount | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 40 volts |
