N-Channel 150V 29A (Tc) 69.5W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 150V 29A (Tc) 69.5W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 150V 29A (Tc) 69.5W (Tc) Surface Mount PowerPAK® SO-8
Trans MOSFET N-CH 150V 29A 8-Pin PowerPAK SO EP T/R Product overview: SIR632DP-T1-RE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR632DP-T1-RE3 can be used for catalog matching and distributor lookup.
MOSFET N-Channel 150V 29A PowerPAK SO8
MOSFET N-Channel 150V 29A PowerPAK SO8
Win Source Part Number: 1277687-SIR632DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: ThunderFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 69.5W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 75 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIR632DP-T1-RE3TR,SI
Base Product Number: SIR632
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
MOSFET 150V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 150V 29A PPAK SO-8
MOSFET, N-CH, 150V, 29A, 150DEG C, 69.5W; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:29A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIR632DP-T1-RE3DKR-ND | 278-SIR632DP-T1-RE3 | 1349159 | 1349723P | 1277687-SIR632DP-T1-RE3 | SIR632DP-T1-RE3 | SIR632DP-T1-RE3 | 15AC8643 |
| Product Name | Single FETs, MOSFETs | 150V 29A MOSFET Transistor | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 150V, 29A, 150Deg C, 69.5W; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Package Type | SO-8; PowerPAK® SO-8 | Tape and Reel | So | SO-8; SO-8 | SO-8; SOT3 | SO-8; PowerPAKR SO-8 | TO-3 | |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 150 volts | |||||||
| Transconductance | 0.0180 kS |
