MOSFET N-CH 200V 5.7A/18.6A PPAK Product overview: SIR624DP-T1-RE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5.7A, 18.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 5.7A, 18.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR624DP-T1-RE3 can be used for catalog matching and distributor lookup.
N-Channel 200V 5.7A (Ta), 18.6A (Tc) 5W (Ta), 52W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 200V 5.7A/18.6A PPAK
MOSFET N-CH 200V 5.7A/18.6A PPAK
MOSFET N-CH 200V 5.7A/18.6A PPAK
MOSFET 200V Vds 20V Vgs PowerPAK SO-8
MOSFET, N-CH, 200V, 18.6A, 150DEG C, 52W; Transistor Polarity:N Channel; Continuous Drain Current Id:18.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIR624DP-T1-RE3 | 742-SIR624DP-T1-RE3TR-ND | SIR624DP-T1-RE3 | SIR624DP-T1-RE3 | 78AC6529 |
| Product Name | 200V 5.7A 18.6A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 200V, 18.6A, 150Deg C, 52W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||
| Transconductance | 0.0260 kS | ||||
| PD | 52 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
