Vishay Intertechnology, Inc. Single FETs, MOSFETs SIR616DP-T1-GE3

MOSFET N-CH 200V 20.2A PPAK SO-8

N-Channel 200V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 200V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 200V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8

Win Source Part Number: 1350350-SIR616DP-T1-GE3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: ThunderFET®
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Power Dissipation (Max): 52W (Tc)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 33 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIR616
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V

Trans MOSFET N-CH 200V 6.2A 8-Pin PowerPAK SO EP T/R Product overview: SIR616DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 6.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 6.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR616DP-T1-GE3 can be used for catalog matching and distributor lookup.