Vishay Intertechnology, Inc. Single FETs, MOSFETs SIR512DP-T1-BE3

N-Channel 100 V (D-S) MOSFET in a PowerPAK SO-8 package, designed for synchronous rectification, DC/DC converters, and motor drive control. The device has a maximum drain-source on-state resistance of 0.0045 Ω at V_GS = 10 V and 0.0051 Ω at V_GS = 7.5 V, with a typical total gate charge of 30.5 nC. It supports a continuous drain current of up to 25.1 A at T_C = 25 °C and 20.1 A at T_C = 70 °C, with a maximum drain-source voltage of 100 V. The package is lead-free and halogen-free, and the operating junction and storage temperature range is -55 °C to +150 °C.