Vishay Intertechnology, Inc. Single FETs, MOSFETs SIR476DP-T1-GE3

Description
N-Channel 25V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 25V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIR476DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR476DP-T1-GE3TR-ND
Single FETs, MOSFETs SIR476DP-T1-GE3TR-ND
N-Channel 25V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 25V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore
25V 60A MOSFET Transistor
278-SIR476DP-T1-GE3
25V 60A MOSFET Transistor 278-SIR476DP-T1-GE3
MOSFET N-CH 25V 60A PPAK SO-8 Product overview: SIR476DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR476DP-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 25V 60A PPAK SO-8 Product overview: SIR476DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR476DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR476DP-T1-GE3 - 1096473-SIR476DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR476DP-T1-GE3
1096473-SIR476DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR476DP-T1-GE3 1096473-SIR476DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096473-SIR476DP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 135nC @ 10V Max Input Capacitance: 6150pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.7 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096473-SIR476DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 135nC @ 10V
Max Input Capacitance: 6150pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.7 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR476DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR476DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR476DP-T1-GE3
MOSFET N-CH 25V 60A PPAK SO-8

MOSFET N-CH 25V 60A PPAK SO-8

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIR476DP-T1-GE3TR-ND 278-SIR476DP-T1-GE3 1096473-SIR476DP-T1-GE3 SIR476DP-T1-GE3
Product Name Single FETs, MOSFETs 25V 60A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR476DP-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SO-8; PowerPAK® SO-8 Tape & Reel (TR) SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAKR SO-8
PD 6250 milliwatts 6250 to 104000 milliwatts
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