MOSFET N-CH 30V 40A PPAK SO-8
Manufacturer: Vishay
Win Source Part Number: 028760-SIR466DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 54W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 65nC @ 10V
Max Input Capacitance: 2730pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 15A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
N-Channel 30V 40A (Tc) 5W (Ta), 54W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 40A (Tc) 5W (Ta), 54W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 30V 40A (Tc) 5W (Ta), 54W (Tc) Surface Mount PowerPAK® SO-8
MOSFET 30V Vds 20V Vgs PowerPAK SO-8
30V 40A 3.5mΩ@10V,15A 2.4V@250uA N Channel PowerPAK-SO-8 MOSFETs ROHS
MOSFET N-CH 30V 40A PPAK SO-8
N CHANNEL MOSFET, 30V, 40A, SOIC, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(on):0.0029ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:2.4VRoHS Compliant: Yes
MOSFET, N CHANNEL, 30V, 40A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; On Resistance Rds(on):0.0029ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 40 A, 30 V, 0.0029 ohm, 10 V, 2.4 V RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIR466DP-T1-GE3 | 028760-SIR466DP-T1-GE3 | SIR466DP-T1-GE3CT-ND | SIR466DP-T1-GE3 | SIR466DP-T1-GE3 | SIR466DP-T1-GE3 | 16P3653 | 97W2609 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR466DP-T1-GE3 | Single FETs, MOSFETs | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 30V, 40A, Soic, Full Reel; Transistor Polarity Vishay | Mosfet Transistor, N Channel, 40 A, 30 V, 0.0029 Ohm, 10 V, 2.4 V Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| IDSS | 40000 milliamps | 40000 milliamps | ||||||
| PD | 5000 milliwatts | 5000 to 54000 milliwatts | 5000 milliwatts |
