Win Source Part Number: 991142-SIR4606DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 31.2W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIR4606DP-T1-GE3
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Trans MOSFET N-CH 60V 10.5A 8-Pin PowerPAK SO EP T/R Product overview: SIR4606DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 10.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 10.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR4606DP-T1-GE3
N-Channel 60V 10.5A (Ta), 16A (Tc) 3.7W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 10.5A (Ta), 16A (Tc) 3.7W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 10.5A (Ta), 16A (Tc) 3.7W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8
N-CHANNEL 60 V (D-S) MOSFET POWE
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 991142-SIR4606DP-T1-GE3 | 278-SIR4606DP-T1-GE3 | 742-SIR4606DP-T1-GE3TR-ND | SIR4606DP-T1-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 60V 10.5A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | |
| PD | 3700 to 31200 milliwatts | 48 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | ||
| Package Type | SO-8; SOT3 | Reel | SO-8; PowerPAK® SO-8 | 13.5 nC @ 10 V |
