Manufacturer: Vishay
Win Source Part Number: 028755-SIR424DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1250pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
N-Channel 20V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 20V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 20V 30A (Tc) 4.8W (Ta), 41.7W (Tc) Surface Mount PowerPAK® SO-8
N-Ch PowerPAK SO-8 BWL 20V 5.5 mohm@10V
N-Ch PowerPAK SO-8 BWL 20V 5.5 mohm@10V
N-Ch PowerPAK SO-8 BWL 20V 5.5 mohm@10V
SiR172DP Series N-Channel 20 V 0.0074 Ohm 41.7 W SMT Mosfet - PowerPAK® SO-8 Product overview: SIR424DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20 V, 0.0074 Ohm, 41.7 W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20 V, 0.0074 Ohm, 41.7 W, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR424DP-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 20V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 20V 30A PPAK SO-8
MOSFET N-CH 20V 30A PPAK SO-8
MOSFET, N-CH, 20V, 30A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET, N-CH, 20V, 30A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET, N-CH, 20V, 30A, POWERPAK SO; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | DigiKey | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028755-SIR424DP-T1-GE3 | SIR424DP-T1-GE3CT-ND | 2567422 | 278-SIR424DP-T1-GE3 | SIR424DP-T1-GE3 | SIR424DP-T1-GE3 | SIR424DP-T1-GE3 | 05AC9469 | 70AC6481 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR424DP-T1-GE3 | Single FETs, MOSFETs | MOSFETs | N-Channel 20 V 0.0074 Ohm 41.7 W MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 30A, Powerpak So; Transistor Polarity Vishay | Mosfet, N-Ch, 20V, 30A, Powerpak So; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||||
| PD | 4800 to 41700 milliwatts | 41700 milliwatts | 4800 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK SO-8 | SO-8; PowerPAKR SO-8 | SO-8; PowerPAK® SO-8 | TO-3 | TO-3 |
