N-CH MOSFET 40V 40A 6.6mR TO-262 PowerPAK Product overview: SIR422DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR422DP-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 40V 40A (Tc) 5W (Ta), 34.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 40A (Tc) 5W (Ta), 34.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 40A (Tc) 5W (Ta), 34.7W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer: Vishay
Win Source Part Number: 028754-SIR422DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Family Name: SiR422DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1785pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): TSM070NA04LCR RLG; RS1G180MNTB; RS1G150MNTB; AON6236;
Introduction Date: July 22, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
MOSFET Transistor, N Channel, 40 A, 40 V, 5400 ohm, 10 V, 1.2 V RoHS Compliant: Yes
MOSFET, N CHANNEL, 40V, 40A, POWERPAK SO-8; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
MOSFET, N CH, 40V, 40A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:34.7W RoHS Compliant: Yes
MOSFET N-CH 40V 40A PPAK SO-8
MOSFET,Power;N-Ch;VD
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 40V 40A PPAK SO-8
MOSFET TRANSISTOR, N CHANNEL, 40 A, 40 V, 5400 OHM, 10 V, 1.2 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Allied Electronics, Inc. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 278-SIR422DP-T1-GE3 | SIR422DP-T1-GE3DKR-ND | 028754-SIR422DP-T1-GE3 | 23T8476 | 05W6929 | 74R0220 | SIR422DP-T1-GE3 | 70026400 | SIR422DP-T1-GE3 | SIR422DP-T1-GE3 | 39130683 |
| Product Name | 40V 40A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR422DP-T1-GE3 | Mosfet Transistor, N Channel, 40 A, 40 V, 5400 Ohm, 10 V, 1.2 V Rohs Compliant Vishay | Mosfet, N Channel, 40V, 40A, Powerpak So-8; Channel Type Vishay | Mosfet, N Ch, 40V, 40A, Powerpak So-8, Full Reel; Channel Type Vishay | Single FETs, MOSFETs | MOSFET,Power;N-Ch;VDSS 40V;RDS(ON) 0.0054Ohm;ID 20A;PowerPak SO-8;-55de | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| PD | 34700 milliwatts | 5000 to 34700 milliwatts | 34700 milliwatts | 5000 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | SO-8; PowerPAK® SO-8 | SO-8; SOT3; PowerPAK SO-8 | TO-3 | TO-3; SO-8 | TO-3; SO-8 | SO-8; PowerPAK® SO-8 | 48 nC @ 10 V |
