Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR422DP-T1-GE3 SIR422DP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 028754-SIR422DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 34.7W (Tc) Family Name: SiR422DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1785pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.6 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): TSM070NA04LCR RLG; RS1G180MNTB; RS1G150MNTB; AON6236; Introduction Date: July 22, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 028754-SIR422DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 34.7W (Tc) Family Name: SiR422DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1785pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.6 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): TSM070NA04LCR RLG; RS1G180MNTB; RS1G150MNTB; AON6236; Introduction Date: July 22, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR422DP-T1-GE3 - 028754-SIR422DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR422DP-T1-GE3
028754-SIR422DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR422DP-T1-GE3 028754-SIR422DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028754-SIR422DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5W (Ta), 34.7W (Tc) Family Name: SiR422DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 48nC @ 10V Max Input Capacitance: 1785pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.6 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): TSM070NA04LCR RLG; RS1G180MNTB; RS1G150MNTB; AON6236; Introduction Date: July 22, 2009 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management

Manufacturer: Vishay
Win Source Part Number: 028754-SIR422DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5W (Ta), 34.7W (Tc)
Family Name: SiR422DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 1785pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): TSM070NA04LCR RLG; RS1G180MNTB; RS1G150MNTB; AON6236;
Introduction Date: July 22, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Single FETs, MOSFETs - SIR422DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR422DP-T1-GE3DKR-ND
Single FETs, MOSFETs SIR422DP-T1-GE3DKR-ND
N-Channel 40V 40A (Tc) 5W (Ta), 34.7W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 40A (Tc) 5W (Ta), 34.7W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR422DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR422DP-T1-GE3TR-ND
Single FETs, MOSFETs SIR422DP-T1-GE3TR-ND
N-Channel 40V 40A (Tc) 5W (Ta), 34.7W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 40A (Tc) 5W (Ta), 34.7W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR422DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR422DP-T1-GE3CT-ND
Single FETs, MOSFETs SIR422DP-T1-GE3CT-ND
N-Channel 40V 40A (Tc) 5W (Ta), 34.7W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 40A (Tc) 5W (Ta), 34.7W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore, Singapore
40V 40A MOSFET Transistor
278-SIR422DP-T1-GE3
40V 40A MOSFET Transistor 278-SIR422DP-T1-GE3
N-CH MOSFET 40V 40A 6.6mR TO-262 PowerPAK Product overview: SIR422DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR422DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-CH MOSFET 40V 40A 6.6mR TO-262 PowerPAK Product overview: SIR422DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR422DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 40 A, 40 V, 5400 Ohm, 10 V, 1.2 V Rohs Compliant Vishay - 23T8476 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 40 A, 40 V, 5400 Ohm, 10 V, 1.2 V Rohs Compliant Vishay
23T8476
Mosfet Transistor, N Channel, 40 A, 40 V, 5400 Ohm, 10 V, 1.2 V Rohs Compliant Vishay 23T8476
MOSFET Transistor, N Channel, 40 A, 40 V, 5400 ohm, 10 V, 1.2 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 40 A, 40 V, 5400 ohm, 10 V, 1.2 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 40V, 40A, Powerpak So-8; Channel Type Vishay - 05W6929 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 40V, 40A, Powerpak So-8; Channel Type Vishay
05W6929
Mosfet, N Channel, 40V, 40A, Powerpak So-8; Channel Type Vishay 05W6929
MOSFET, N CHANNEL, 40V, 40A, POWERPAK SO-8; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes

MOSFET, N CHANNEL, 40V, 40A, POWERPAK SO-8; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Ch, 40V, 40A, Powerpak So-8, Full Reel; Channel Type Vishay - 74R0220 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 40V, 40A, Powerpak So-8, Full Reel; Channel Type Vishay
74R0220
Mosfet, N Ch, 40V, 40A, Powerpak So-8, Full Reel; Channel Type Vishay 74R0220
MOSFET, N CH, 40V, 40A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:34.7W RoHS Compliant: Yes

MOSFET, N CH, 40V, 40A, POWERPAK SO-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:34.7W RoHS Compliant: Yes

Supplier's Site
Transistor - 39130683 - Radwell International
Willingboro, NJ, United States
Transistor
39130683
Transistor 39130683
MOSFET TRANSISTOR, N CHANNEL, 40 A, 40 V, 5400 OHM, 10 V, 1.2 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET TRANSISTOR, N CHANNEL, 40 A, 40 V, 5400 OHM, 10 V, 1.2 V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
MOSFET,Power;N-Ch;VDSS 40V;RDS(ON) 0.0054Ohm;ID 20A;PowerPak SO-8;-55de - 70026400 - Allied Electronics, Inc.
Fort Worth, TX, USA
MOSFET,Power;N-Ch;VDSS 40V;RDS(ON) 0.0054Ohm;ID 20A;PowerPak SO-8;-55de
70026400
MOSFET,Power;N-Ch;VDSS 40V;RDS(ON) 0.0054Ohm;ID 20A;PowerPak SO-8;-55de 70026400
MOSFET,Power;N-Ch;VD SS 40V;RDS(ON) 0.0054Ohm;ID 20A;PowerPak SO-8;-55de

MOSFET,Power;N-Ch;VDSS 40V;RDS(ON) 0.0054Ohm;ID 20A;PowerPak SO-8;-55de

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 40V Vds 20V Vgs PowerPAK SO-8

MOSFET 40V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR422DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIR422DP-T1-GE3
Single FETs, MOSFETs SIR422DP-T1-GE3
MOSFET N-CH 40V 40A PPAK SO-8

MOSFET N-CH 40V 40A PPAK SO-8

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR422DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR422DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR422DP-T1-GE3
MOSFET N-CH 40V 40A PPAK SO-8

MOSFET N-CH 40V 40A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company Radwell International Allied Electronics, Inc. VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028754-SIR422DP-T1-GE3 SIR422DP-T1-GE3DKR-ND 278-SIR422DP-T1-GE3 23T8476 05W6929 74R0220 39130683 70026400 SIR422DP-T1-GE3 SIR422DP-T1-GE3 SIR422DP-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR422DP-T1-GE3 Single FETs, MOSFETs 40V 40A MOSFET Transistor Mosfet Transistor, N Channel, 40 A, 40 V, 5400 Ohm, 10 V, 1.2 V Rohs Compliant Vishay Mosfet, N Channel, 40V, 40A, Powerpak So-8; Channel Type Vishay Mosfet, N Ch, 40V, 40A, Powerpak So-8, Full Reel; Channel Type Vishay Transistor MOSFET,Power;N-Ch;VDSS 40V;RDS(ON) 0.0054Ohm;ID 20A;PowerPak SO-8;-55de MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 40 volts 40 volts
PD 5000 to 34700 milliwatts 34700 milliwatts 34700 milliwatts 5000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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