Vishay Precision Group Single FETs, MOSFETs SIR416DP-T1-GE3

Description
N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet
Description
N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIR416DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR416DP-T1-GE3DKR-ND
Single FETs, MOSFETs SIR416DP-T1-GE3DKR-ND
N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR416DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR416DP-T1-GE3CT-ND
Single FETs, MOSFETs SIR416DP-T1-GE3CT-ND
N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR416DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR416DP-T1-GE3TR-ND
Single FETs, MOSFETs SIR416DP-T1-GE3TR-ND
N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore
N-Channel 40V 50A MOSFET Transistor
278-SIR416DP-T1-GE3
N-Channel 40V 50A MOSFET Transistor 278-SIR416DP-T1-GE3
N-Channel MOSFET, 40V, 50A, 3.8mR, PowerPAK SOP-8 Product overview: SIR416DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR416DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 40V, 50A, 3.8mR, PowerPAK SOP-8 Product overview: SIR416DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR416DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIR416DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIR416DP-T1-GE3
Single FETs, MOSFETs SIR416DP-T1-GE3
MOSFET N-CH 40V 50A PPAK SO-8

MOSFET N-CH 40V 50A PPAK SO-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR416DP-T1-GE3 - 1096468-SIR416DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR416DP-T1-GE3
1096468-SIR416DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR416DP-T1-GE3 1096468-SIR416DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096468-SIR416DP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Family Name: SiR416DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 90nC @ 10V Max Input Capacitance: 3350pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): TPCP8011; Introduction Date: December 21, 2012 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1096468-SIR416DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Family Name: SiR416DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 3350pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): TPCP8011;
Introduction Date: December 21, 2012
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Mosfet, N-Ch, 40V, 50A, Powerpak So Rohs Compliant Vishay - 57AJ0397 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 50A, Powerpak So Rohs Compliant Vishay
57AJ0397
Mosfet, N-Ch, 40V, 50A, Powerpak So Rohs Compliant Vishay 57AJ0397
MOSFET, N-CH, 40V, 50A, POWERPAK SO ROHS COMPLIANT: YES

MOSFET, N-CH, 40V, 50A, POWERPAK SO ROHS COMPLIANT: YES

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 40V Vds 20V Vgs PowerPAK SO-8

MOSFET 40V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR416DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR416DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR416DP-T1-GE3
MOSFET N-CH 40V 50A PPAK SO-8

MOSFET N-CH 40V 50A PPAK SO-8

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIR416DP-T1-GE3DKR-ND 278-SIR416DP-T1-GE3 SIR416DP-T1-GE3 1096468-SIR416DP-T1-GE3 57AJ0397 SIR416DP-T1-GE3 SIR416DP-T1-GE3
Product Name Single FETs, MOSFETs N-Channel 40V 50A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR416DP-T1-GE3 Mosfet, N-Ch, 40V, 50A, Powerpak So Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type SO-8; PowerPAK® SO-8 SO-8; PowerPAK® SO-8 SO-8; SOT3; PowerPAK SO-8 TO-3 SO-8; PowerPAKR SO-8
PD 69000 milliwatts 5200 milliwatts 5200 to 69000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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