Vishay Precision Group Single FETs, MOSFETs SIR416DP-T1-GE3

Description
MOSFET N-CH 40V 50A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET N-CH 40V 50A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIR416DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIR416DP-T1-GE3
Single FETs, MOSFETs SIR416DP-T1-GE3
MOSFET N-CH 40V 50A PPAK SO-8

MOSFET N-CH 40V 50A PPAK SO-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR416DP-T1-GE3 - 1096468-SIR416DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR416DP-T1-GE3
1096468-SIR416DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR416DP-T1-GE3 1096468-SIR416DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096468-SIR416DP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Family Name: SiR416DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 90nC @ 10V Max Input Capacitance: 3350pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.8 mOhm @ 15A, 10V Alternative Parts (Cross-Reference): TPCP8011; Introduction Date: December 21, 2012 ECCN: EAR99 Country of Origin: Philippines Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1096468-SIR416DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Family Name: SiR416DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 90nC @ 10V
Max Input Capacitance: 3350pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 15A, 10V
Alternative Parts (Cross-Reference): TPCP8011;
Introduction Date: December 21, 2012
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SIR416DP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR416DP-T1-GE3DKR-ND
Single FETs, MOSFETs SIR416DP-T1-GE3DKR-ND
N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR416DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR416DP-T1-GE3CT-ND
Single FETs, MOSFETs SIR416DP-T1-GE3CT-ND
N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIR416DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR416DP-T1-GE3TR-ND
Single FETs, MOSFETs SIR416DP-T1-GE3TR-ND
N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Singapore
N-Channel 40V 50A MOSFET Transistor
278-SIR416DP-T1-GE3
N-Channel 40V 50A MOSFET Transistor 278-SIR416DP-T1-GE3
N-Channel MOSFET, 40V, 50A, 3.8mR, PowerPAK SOP-8 Product overview: SIR416DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR416DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 40V, 50A, 3.8mR, PowerPAK SOP-8 Product overview: SIR416DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR416DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 40V, 50A, Powerpak So Rohs Compliant Vishay - 57AJ0397 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 50A, Powerpak So Rohs Compliant Vishay
57AJ0397
Mosfet, N-Ch, 40V, 50A, Powerpak So Rohs Compliant Vishay 57AJ0397
MOSFET, N-CH, 40V, 50A, POWERPAK SO ROHS COMPLIANT: YES

MOSFET, N-CH, 40V, 50A, POWERPAK SO ROHS COMPLIANT: YES

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 40V Vds 20V Vgs PowerPAK SO-8

MOSFET 40V Vds 20V Vgs PowerPAK SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR416DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR416DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR416DP-T1-GE3
MOSFET N-CH 40V 50A PPAK SO-8

MOSFET N-CH 40V 50A PPAK SO-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIR416DP-T1-GE3 1096468-SIR416DP-T1-GE3 SIR416DP-T1-GE3DKR-ND 278-SIR416DP-T1-GE3 57AJ0397 SIR416DP-T1-GE3 SIR416DP-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR416DP-T1-GE3 Single FETs, MOSFETs N-Channel 40V 50A MOSFET Transistor Mosfet, N-Ch, 40V, 50A, Powerpak So Rohs Compliant Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts
IDSS 50000 milliamps
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