Manufacturer: Vishay
Win Source Part Number: 132022-SIR414DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Family Name: SiR414DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 117nC @ 10V
Max Input Capacitance: 4750pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): TSM033NB04CR RLG; AUXFN8403TR; TSM033NB04LCR RLG;
Introduction Date: March 09, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
40V 50A N-CH MOSFET 2.8mR PPAK SO-8 Product overview: SIR414DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR414DP-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 40V 50A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 50A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 40V 50A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 40V 50A PPAK SO-8
MOSFET N-CH 40V 50A PPAK SO-8
MOSFET N-CH 40V 50A PPAK SO-8
MOSFET Transistor, N Channel, 50 A, 40 V, 2.3 mohm, 10 V, 1 V RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Utmel Electronic Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 132022-SIR414DP-T1-GE3 | 278-SIR414DP-T1-GE3 | SIR414DP-T1-GE3CT-ND | SIR414DP-T1-GE3 | 880-SIR414DP-T1-GE3 | SIR414DP-T1-GE3 | SIR414DP-T1-GE3 | 97W2606 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR414DP-T1-GE3 | 40V 50A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | MOSFET N-CH 40V 50A PPAK SO-8 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 50 A, 40 V, 2.3 Mohm, 10 V, 1 V Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | |||||
| PD | 5400 to 83000 milliwatts | 83000 milliwatts | 5400 milliwatts | 5400 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SO-8; SOT3; PowerPAK SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | TO-3 |
