N-CH MOSFET 20V 35A 5mR 36W Surface Mount Product overview: SIR410DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 35A, 36W. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 35A, 36W, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR410DP-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 131524-SIR410DP-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Family Name: SiR410DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1600pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.8 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): TPCC8007; TPCC8007(TE12L,QM); TPCC8007(T2LPC,QM); TPCC8007(TE12L,VM);
Introduction Date: October 30, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
N-Channel 20V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 20V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 20V 35A (Tc) 4.2W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
MOSFET, N-CH, 20V, 35A, 150DEG C, 36W; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 20V 35A PPAK SO-8
MOSFET N-CH 20V 35A PPAK SO-8
MOSFET 20V Vds 20V Vgs PowerPAK SO-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIR410DP-T1-GE3 | 131524-SIR410DP-T1-GE3 | SIR410DP-T1-GE3CT-ND | 70AC6480 | SIR410DP-T1-GE3 | SIR410DP-T1-GE3 | SIR410DP-T1-GE3 |
| Product Name | SMD 20V 35A 36W MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR410DP-T1-GE3 | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 35A, 150Deg C, 36W; Channel Type Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 36000 milliwatts | 4200 to 36000 milliwatts | 4200 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 20 volts | 20 volts |
