Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR408DP-T1-GE3 SIR408DP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 134719-SIR408DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 4.8W (Ta), 44.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1230pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.3 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 134719-SIR408DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 4.8W (Ta), 44.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1230pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.3 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR408DP-T1-GE3 - 134719-SIR408DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR408DP-T1-GE3
134719-SIR408DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR408DP-T1-GE3 134719-SIR408DP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 134719-SIR408DP-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 4.8W (Ta), 44.6W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 1230pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.3 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 134719-SIR408DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 4.8W (Ta), 44.6W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 1230pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.3 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
25V 50A MOSFET Transistor
278-SIR408DP-T1-GE3
25V 50A MOSFET Transistor 278-SIR408DP-T1-GE3
MOSFET N-CH 25V 50A PPAK SO-8 Product overview: SIR408DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR408DP-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 25V 50A PPAK SO-8 Product overview: SIR408DP-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR408DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIR408DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIR408DP-T1-GE3TR-ND
Single FETs, MOSFETs SIR408DP-T1-GE3TR-ND
N-Channel 25V 50A (Tc) 4.8W (Ta), 44.6W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 25V 50A (Tc) 4.8W (Ta), 44.6W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR408DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR408DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR408DP-T1-GE3
MOSFET N-CH 25V 50A PPAK SO-8

MOSFET N-CH 25V 50A PPAK SO-8

Supplier's Site
MOSFET 25 Volts 21.5 Amps 4.8 Watts - 880-SIR408DP-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET 25 Volts 21.5 Amps 4.8 Watts
880-SIR408DP-T1-GE3
MOSFET 25 Volts 21.5 Amps 4.8 Watts 880-SIR408DP-T1-GE3
MOSFET 25 Volts 21.5 Amps 4.8 Watts

MOSFET 25 Volts 21.5 Amps 4.8 Watts

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 134719-SIR408DP-T1-GE3 278-SIR408DP-T1-GE3 SIR408DP-T1-GE3TR-ND SIR408DP-T1-GE3 880-SIR408DP-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR408DP-T1-GE3 25V 50A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET 25 Volts 21.5 Amps 4.8 Watts
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 25 volts 25 volts
PD 4800 to 44600 milliwatts 4800 milliwatts 4800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3; PowerPAK SO-8 Tape & Reel (TR) SO-8; PowerPAK® SO-8 1230 pF @ 15 V
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