Vishay Intertechnology, Inc. 20V 45.6A MOSFET Transistor SIR404DP-T1-GE3

20V 45.6A N-CH MOSFET 1.6mR PPAK SO-8 Product overview: SIR404DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 45.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 45.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR404DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Manufacturer: Vishay
Win Source Part Number: 1096465-SIR404DP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Family Name: SiR404DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 97nC @ 4.5V
Max Input Capacitance: 8130pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 1.6 mOhm @ 20A, 10V
Introduction Date: May 25, 2009
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited