Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR403EDP-T1-GE3 SIR403EDP-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 211728-SIR403EDP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 153nC @ 10V Max Input Capacitance: 4620pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 211728-SIR403EDP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 153nC @ 10V Max Input Capacitance: 4620pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR403EDP-T1-GE3 - 211728-SIR403EDP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR403EDP-T1-GE3
211728-SIR403EDP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR403EDP-T1-GE3 211728-SIR403EDP-T1-GE3
Manufacturer: Vishay Win Source Part Number: 211728-SIR403EDP-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK SO-8 Dimension: PowerPAK SO-8 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.8V @ 250μA Max Gate Charge: 153nC @ 10V Max Input Capacitance: 4620pF @ 15V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 211728-SIR403EDP-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK SO-8
Dimension: PowerPAK SO-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 250μA
Max Gate Charge: 153nC @ 10V
Max Input Capacitance: 4620pF @ 15V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
30V 40A MOSFET Transistor
278-SIR403EDP-T1-GE3
30V 40A MOSFET Transistor 278-SIR403EDP-T1-GE3
MOSFET P-CH 30V 40A PPAK 8SO Product overview: SIR403EDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR403EDP-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 40A PPAK 8SO Product overview: SIR403EDP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR403EDP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 742-SIR403EDP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIR403EDP-T1-GE3TR-ND
Single FETs, MOSFETs 742-SIR403EDP-T1-GE3TR-ND
P-Channel 30V 40A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8

P-Channel 30V 40A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIR403EDP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIR403EDP-T1-GE3CT-ND
Single FETs, MOSFETs 742-SIR403EDP-T1-GE3CT-ND
MOSFET P-CH 30V 40A PPAK SO-8

MOSFET P-CH 30V 40A PPAK SO-8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIR403EDP-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIR403EDP-T1-GE3DKR-ND
Single FETs, MOSFETs 742-SIR403EDP-T1-GE3DKR-ND
MOSFET P-CH 30V 40A PPAK SO-8

MOSFET P-CH 30V 40A PPAK SO-8

Buy Now Datasheet
MOSFET -30V Vds 25V Vgs PowerPAK SO-8

MOSFET -30V Vds 25V Vgs PowerPAK SO-8

Buy Now Datasheet
MOSFET P-CH 30V 40A PPAK 8SO - 880-SIR403EDP-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 30V 40A PPAK 8SO
880-SIR403EDP-T1-GE3
MOSFET P-CH 30V 40A PPAK 8SO 880-SIR403EDP-T1-GE3
MOSFET P-CH 30V 40A PPAK 8SO

MOSFET P-CH 30V 40A PPAK 8SO

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIR403EDP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIR403EDP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIR403EDP-T1-GE3
MOSFET P-CH 30V 40A PPAK SO-8

MOSFET P-CH 30V 40A PPAK SO-8

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 211728-SIR403EDP-T1-GE3 278-SIR403EDP-T1-GE3 742-SIR403EDP-T1-GE3TR-ND SIR403EDP-T1-GE3 880-SIR403EDP-T1-GE3 SIR403EDP-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR403EDP-T1-GE3 30V 40A MOSFET Transistor Single FETs, MOSFETs MOSFET MOSFET P-CH 30V 40A PPAK 8SO Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts 30 volts
PD 5000 to 56800 milliwatts 56800 milliwatts 5000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; SOT3; PowerPAK SO-8 SO-8; PowerPAK® SO-8 Surface Mount
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