Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR402DP-T1-E3 SIR402DP-T1-E3

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1093113-SIR402DP-T1- E3 Packaging: Cut Tape Drain to Source Voltage (Vdss): 30 V Power Dissipation: 4.2 W Resistance: 6 mΩ Number of Pins: 8 Rise Time: 20 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): SISA04DN-T1-GE3; SIS476DN-T1-GE3; SIRA06DP-T1-GE3; FDD8878; NTD4963N-35G; STD40NF03LT4; Popularity: Low Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: Unknown Max Power Dissipation: 4.2 W Continuous Drain Current (ID): 35 A Drain to Source Resistance: 6 mΩ Nominal Vgs: 1.15 V Threshold Voltage: 1.15 V
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Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1093113-SIR402DP-T1- E3 Packaging: Cut Tape Drain to Source Voltage (Vdss): 30 V Power Dissipation: 4.2 W Resistance: 6 mΩ Number of Pins: 8 Rise Time: 20 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): SISA04DN-T1-GE3; SIS476DN-T1-GE3; SIRA06DP-T1-GE3; FDD8878; NTD4963N-35G; STD40NF03LT4; Popularity: Low Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: Unknown Max Power Dissipation: 4.2 W Continuous Drain Current (ID): 35 A Drain to Source Resistance: 6 mΩ Nominal Vgs: 1.15 V Threshold Voltage: 1.15 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR402DP-T1-E3 - 1093113-SIR402DP-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR402DP-T1-E3
1093113-SIR402DP-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR402DP-T1-E3 1093113-SIR402DP-T1-E3
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1093113-SIR402DP-T1- E3 Packaging: Cut Tape Drain to Source Voltage (Vdss): 30 V Power Dissipation: 4.2 W Resistance: 6 mΩ Number of Pins: 8 Rise Time: 20 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): SISA04DN-T1-GE3; SIS476DN-T1-GE3; SIRA06DP-T1-GE3; FDD8878; NTD4963N-35G; STD40NF03LT4; Popularity: Low Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C REACH SVHC: Unknown Max Power Dissipation: 4.2 W Continuous Drain Current (ID): 35 A Drain to Source Resistance: 6 mΩ Nominal Vgs: 1.15 V Threshold Voltage: 1.15 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1093113-SIR402DP-T1-E3
Packaging: Cut Tape
Drain to Source Voltage (Vdss): 30 V
Power Dissipation: 4.2 W
Resistance: 6 mΩ
Number of Pins: 8
Rise Time: 20 ns
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): SISA04DN-T1-GE3; SIS476DN-T1-GE3; SIRA06DP-T1-GE3; FDD8878; NTD4963N-35G; STD40NF03LT4;
Popularity: Low
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
REACH SVHC: Unknown
Max Power Dissipation: 4.2 W
Continuous Drain Current (ID): 35 A
Drain to Source Resistance: 6 mΩ
Nominal Vgs: 1.15 V
Threshold Voltage: 1.15 V

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 1093113-SIR402DP-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR402DP-T1-E3
Package Type SO-8; SOT3
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