N-Channel 60V 23.8A (Ta), 80.3A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 23.8A (Ta), 80.3A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 23.8A (Ta), 80.3A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8
Trans MOSFET N-CH 60V 23.8A 8-Pin PowerPAK SO EP T/R Product overview: SIR186LDP-T1-RE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 23.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 23.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR186LDP-T1-RE3
Win Source Part Number: 1383442-SIR186LDP-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Ta), 80.3A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 57W (Tc)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 43 pct.
HTSUS: 8541.29.0095
Mfr: Vishay
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Standard Package: 3,000 pcs
N-CHANNEL 60-V (D-S) MOSFET POWE
N-CHANNEL 60-V (D-S) MOSFET POWE
MOSFET, N-CH, 60V, 80.3A, POWERPAK SO ROHS COMPLIANT: YES
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SIR186LDP-T1-RE3TR-ND | 278-SIR186LDP-T1-RE3 | 1383442-SIR186LDP-T1-RE3 | SIR186LDP-T1-RE3 | SIR186LDP-T1-RE3 | 31AJ7241 |
| Product Name | Single FETs, MOSFETs | 60V 23.8A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 80.3A, Powerpak So Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | SO-8; PowerPAK® SO-8 | Tape and Reel | SO-8; SOT3 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAKR SO-8 | TO-3 |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| PD | 5000 milliwatts | 5000 to 57000 milliwatts | 5000 milliwatts |
