Power Field-Effect Transistor, Product overview: SIR182DP-T1-RE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR182DP-T1-RE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 895028-SIR182DP-T1-R
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 60 V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8
Package: PowerPAK® SO-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIR182
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® SO-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIR182DP-T1-RE3DKR, SIR182DP-T1-RE3CT, SIR182DP-T1-RE3TR
N-Channel 60V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 60V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8
MOSFET N-CH 60V 60A PPAK SO-8
MOSFET, N-CH, 60V, 0.06A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power RoHS Compliant: Yes
60V 60A 2.8mΩ@10V,15A 69.4W 3.6V@250uA N Channel PowerPAK-SO-8 MOSFETs ROHS
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
MOSFET N-CH 60V 60A PPAK SO-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIR182DP-T1-RE3 | 895028-SIR182DP-T1-RE3 | SIR182DP-T1-RE3TR-ND | SIR182DP-T1-RE3 | 37AC0917 | SIR182DP-T1-RE3 | SIR182DP-T1-RE3 | SIR182DP-T1-RE3 |
| Product Name | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIR182DP-T1-RE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, 0.06A, Powerpak So; Transistor Polarity Vishay | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| Package Type | SO-8; SOT3; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | TO-3 | SO-8; PowerPAKR SO-8 | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts |
