Vishay Intertechnology, Inc. MOSFET SiR180DP-T1-RE3

Description
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
Description
MOSFET 60V Vds 20V Vgs PowerPAK SO-8
Datasheet
Datasheet Summary
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The SiR180DP-T1-RE3 is an N-channel 60 V MOSFET in a PowerPAK SO-8 package, designed for synchronous rectification, DC/DC conversion, and motor drive switching. It has a maximum on-state resistance of 0.00205 Ω at 10 V gate-source voltage and 0.00250 Ω at 7.5 V, with a total gate charge of 44 nC. The device supports a continuous drain current of 32.4 A at 25 °C and 25.7 A at 70 °C, with a pulsed drain current rating of 150 A. The junction-to-case thermal resistance is 1.5 °C/W, and the operating junction temperature ranges from -55 °C to +150 °C. The package is lead-free and halogen-free, and the part meets AEC-Q200 qualifications.

Datasheet Summary
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The SiR180DP-T1-RE3 is an N-channel 60 V MOSFET in a PowerPAK SO-8 package, designed for synchronous rectification, DC/DC conversion, and motor drive switching. It has a maximum on-state resistance of 0.00205 Ω at 10 V gate-source voltage and 0.00250 Ω at 7.5 V, with a total gate charge of 44 nC. The device supports a continuous drain current of 32.4 A at 25 °C and 25.7 A at 70 °C, with a pulsed drain current rating of 150 A. The junction-to-case thermal resistance is 1.5 °C/W, and the operating junction temperature ranges from -55 °C to +150 °C. The package is lead-free and halogen-free, and the part meets AEC-Q200 qualifications.

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Sheung Wan, Hong Kong
MOSFET 60V Vds 20V Vgs PowerPAK SO-8

MOSFET 60V Vds 20V Vgs PowerPAK SO-8

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SiR180DP-T1-RE3
Product Name MOSFET
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