The 1112078-SIR150DP-T1-RE3 is an N-Channel MOSFET from Win Source Electronics, designed for applications requiring efficient power management. It features a maximum drain-source voltage of 45 V and can handle continuous drain currents of up to 110 A at a case temperature of 25 ¬8C. The device exhibits a low on-state resistance of 2.71 mOc at a gate-source voltage of 10 V and a drain current of 15 A, making it suitable for high-efficiency applications. This MOSFET is packaged in a PowerPAK SO-8 configuration, which allows for effective thermal management and minimizes the junction-to-ambient thermal resistance. The operating temperature range extends from -55 ¬8C to +150 ¬8C, ensuring reliability in various environmental conditions. The device also has a total gate charge of 70 nC at 10 V, which contributes to its fast switching capabilities. Applications for this MOSFET include synchronous rectification, high power density DC/DC converters, and motor drive control. The product is compliant with lead-free and halogen-free standards, making it suitable for environmentally conscious designs.
MOSFET N-CH 45V 30.9A/110A PPAK Product overview: SIR150DP-T1-RE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 30.9A, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 45V, 30.9A, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIR150DP-T1-RE3 can be used for catalog matching and distributor lookup.
N-Channel 45V 30.9A (Ta), 110A (Tc) 5.2W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 45V 30.9A (Ta), 110A (Tc) 5.2W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 45V 30.9A (Ta), 110A (Tc) 5.2W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1112078-SIR150DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 45 V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.71mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIR150DP-T1-RE3C
Base Product Number: SIR150
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET, N-CH, 45V, 110A, 150DEG C, 65.7W ROHS COMPLIANT: YES
MOSFET N-CH 45V 30.9A/110A PPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIR150DP-T1-RE3 | 742-SIR150DP-T1-RE3TR-ND | 1112078-SIR150DP-T1-RE3 | 40AH5359 | SIR150DP-T1-RE3 |
| Product Name | 45V 30.9A 110A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 45V, 110A, 150Deg C, 65.7W Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | ||||
| Transconductance | 0.0720 kS | ||||
| PD | 65.7 milliwatts | 5200 to 65700 milliwatts |
