Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIJ800DP-T1-GE3 SIJ800DP-T1-GE3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 794402-SIJ800DP-T1-G E3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Family Name: SiJ800DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PowerPAK SO-8 Channel Type Type: N Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2400pF @ 20V Vgs (Maximum): ±20V Power Dissipation (Maximum): 4.2W (Ta), 35.7W (Tc) Rds On (Maximum) @ Id, Vgs: 9.5 mOhm @ 20A, 10V Introduction Date: May 19, 2009 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Siliconix Win Source Part Number: 794402-SIJ800DP-T1-G E3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Family Name: SiJ800DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PowerPAK SO-8 Channel Type Type: N Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2400pF @ 20V Vgs (Maximum): ±20V Power Dissipation (Maximum): 4.2W (Ta), 35.7W (Tc) Rds On (Maximum) @ Id, Vgs: 9.5 mOhm @ 20A, 10V Introduction Date: May 19, 2009 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIJ800DP-T1-GE3 - 794402-SIJ800DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIJ800DP-T1-GE3
794402-SIJ800DP-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIJ800DP-T1-GE3 794402-SIJ800DP-T1-GE3
Manufacturer: Vishay Siliconix Win Source Part Number: 794402-SIJ800DP-T1-G E3 Series: TrenchFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: PowerPAK SO-8 Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Family Name: SiJ800DP Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: PowerPAK SO-8 Channel Type Type: N Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 3V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2400pF @ 20V Vgs (Maximum): ±20V Power Dissipation (Maximum): 4.2W (Ta), 35.7W (Tc) Rds On (Maximum) @ Id, Vgs: 9.5 mOhm @ 20A, 10V Introduction Date: May 19, 2009 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: Vishay Siliconix
Win Source Part Number: 794402-SIJ800DP-T1-GE3
Series: TrenchFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: PowerPAK SO-8
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Family Name: SiJ800DP
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PowerPAK SO-8
Channel Type Type: N
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2400pF @ 20V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 4.2W (Ta), 35.7W (Tc)
Rds On (Maximum) @ Id, Vgs: 9.5 mOhm @ 20A, 10V
Introduction Date: May 19, 2009
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIJ800DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIJ800DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIJ800DP-T1-GE3
MOSFET N-CH 40V 20A PPAK SO-8

MOSFET N-CH 40V 20A PPAK SO-8

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 794402-SIJ800DP-T1-GE3 SIJ800DP-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIJ800DP-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 4200 to 35700 milliwatts
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