Trans MOSFET N-CH 150V 36.8A 5-Pin(4+Tab) PowerPAK SO T/R Product overview: SIJ494DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 36.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 36.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIJ494DP-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 150V 36.8A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 150V 36.8A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 150V 36.8A (Tc) 69.4W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1014335-SIJ494DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: ThunderFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 36.8A (Tc)
Rds On (Max) @ Id, Vgs: 23.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 69.4W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 75 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIJ494DP-T1-GE3TR,SI
Base Product Number: SIJ494
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
MOSFET, N-CH, 150V, 36.8A, POWERPAK SO ROHS COMPLIANT: YES
MOSFET N-CH 150V 36.8A PPAK SO-8
MOSFET N-CH 150V 36.8A PPAK SO-8
MOSFET N-Ch 150V Vds 16.1nC Qg Typ
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIJ494DP-T1-GE3 | SIJ494DP-T1-GE3CT-ND | 1014335-SIJ494DP-T1-GE3 | 57AJ0386 | SIJ494DP-T1-GE3 | SIJ494DP-T1-GE3 | SIJ494DP-T1-GE3 |
| Product Name | 150V 36.8A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 150V, 36.8A, Powerpak So Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 150 volts | 150 volts | |||||
| Transconductance | 0.0250 kS | ||||||
| PD | 69.4 milliwatts | 69400 milliwatts | 69400 milliwatts |
