Vishay Intertechnology, Inc. Single FETs, MOSFETs SIJ482DP-T1-GE3

Description
MOSFET N-CH 80V 60A PPAK SO-8
Request a Quote Datasheet
Description
MOSFET N-CH 80V 60A PPAK SO-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIJ482DP-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIJ482DP-T1-GE3
Single FETs, MOSFETs SIJ482DP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8

MOSFET N-CH 80V 60A PPAK SO-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SIJ482DP-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIJ482DP-T1-GE3CT-ND
Single FETs, MOSFETs SIJ482DP-T1-GE3CT-ND
N-Channel 80V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 80V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Single FETs, MOSFETs - SIJ482DP-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIJ482DP-T1-GE3TR-ND
Single FETs, MOSFETs SIJ482DP-T1-GE3TR-ND
N-Channel 80V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 80V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1201493-SIJ482DP-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1201493-SIJ482DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1201493-SIJ482DP-T1-GE3
Win Source Part Number: 1201493-SIJ482DP-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel (TR),Cut Tape (CT) Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Power Dissipation (Max): 5W (Ta), 69.4W (Tc) Package / Case: PowerPAK® SO-8 Supplier Device Package: PowerPAK® SO-8 Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 40 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SIJ482DP-T1-GE3.; ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIJ482DP-T1-GE3DKR,S IJ482DP-T1-GE3DKRINA CTIVE,SIJ482DP-T1-GE 3TR,SIJ482DP-T1-GE3C T,SIJ482DP-T1-GE3DKR -ND,SIJ482DPT1GE3 Base Product Number: SIJ482 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1201493-SIJ482DP-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel (TR),Cut Tape (CT)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIJ482DP-T1-GE3.;
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIJ482DP-T1-GE3DKR,SIJ482DP-T1-GE3DKRINACTIVE,SIJ482DP-T1-GE3TR,SIJ482DP-T1-GE3CT,SIJ482DP-T1-GE3DKR-ND,SIJ482DPT1GE3
Base Product Number: SIJ482
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
MOSFETs - 2567419 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567419
MOSFETs 2567419
N-Ch MOSFET PPAKSO8L BWL 80V 6.2mohm@10V

N-Ch MOSFET PPAKSO8L BWL 80V 6.2mohm@10V

Supplier's Site
MOSFETs - 2567419P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567419P
MOSFETs 2567419P
N-Ch MOSFET PPAKSO8L BWL 80V 6.2mohm@10V

N-Ch MOSFET PPAKSO8L BWL 80V 6.2mohm@10V

Supplier's Site
MOSFETs - 2567418 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2567418
MOSFETs 2567418
N-Ch MOSFET PPAKSO8L BWL 80V 6.2mohm@10V

N-Ch MOSFET PPAKSO8L BWL 80V 6.2mohm@10V

Supplier's Site
Singapore
80V 60A MOSFET Transistor
278-SIJ482DP-T1-GE3
80V 60A MOSFET Transistor 278-SIJ482DP-T1-GE3
80V 60A N-CH MOSFET, 6.2mR Rds On, Power Transistor Product overview: SIJ482DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIJ482DP-T1-GE3 can be used for catalog matching and distributor lookup.

80V 60A N-CH MOSFET, 6.2mR Rds On, Power Transistor Product overview: SIJ482DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIJ482DP-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 80V Vds 20V Vgs PowerPAK SO-8L

MOSFET 80V Vds 20V Vgs PowerPAK SO-8L

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIJ482DP-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIJ482DP-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIJ482DP-T1-GE3
MOSFET N-CH 80V 60A PPAK SO-8

MOSFET N-CH 80V 60A PPAK SO-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics RS Components, Ltd. ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIJ482DP-T1-GE3 SIJ482DP-T1-GE3CT-ND 1201493-SIJ482DP-T1-GE3 2567419 278-SIJ482DP-T1-GE3 SIJ482DP-T1-GE3 SIJ482DP-T1-GE3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFETs 80V 60A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 80 volts
IDSS 60000 milliamps
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