80V 60A N-CH MOSFET, 6.2mR Rds On, Power Transistor Product overview: SIJ482DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIJ482DP-T1-GE3 can be used for catalog matching and distributor lookup.
N-Ch MOSFET PPAKSO8L BWL 80V 6.2mohm@10V
N-Ch MOSFET PPAKSO8L BWL 80V 6.2mohm@10V
N-Ch MOSFET PPAKSO8L BWL 80V 6.2mohm@10V
MOSFET N-CH 80V 60A PPAK SO-8
N-Channel 80V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8
N-Channel 80V 60A (Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8
Win Source Part Number: 1201493-SIJ482DP-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel (TR),Cut Tape (CT)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 40 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIJ482DP-T1-GE3.;
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIJ482DP-T1-GE3DKR,S
Base Product Number: SIJ482
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 80V 60A PPAK SO-8
MOSFET 80V Vds 20V Vgs PowerPAK SO-8L
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIJ482DP-T1-GE3 | 2567419 | SIJ482DP-T1-GE3 | SIJ482DP-T1-GE3CT-ND | 1201493-SIJ482DP-T1-GE3 | SIJ482DP-T1-GE3 | SIJ482DP-T1-GE3 |
| Product Name | 80V 60A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| PD | 69400 milliwatts | 5000 milliwatts | 5000 to 69400 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SO-8; PowerPAK SO-8L | SO-8; PowerPAK® SO-8 | SO-8; PowerPAK® SO-8 | SO-8; SOT3 | SO-8; PowerPAKR SO-8 |
