Vishay Intertechnology, Inc. FETs - Single - SIJ470DP-T1-GE3 SIJ470DP-T1-GE3

Manufacturer: Vishay Siliconix
Win Source Part Number: 812132-SIJ470DP-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: PowerPAK SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK SO-8
Power Dissipation (Maximum): 5W , 56.8W (Tc)
Popularity: Low
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 9.1mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 56nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 2050pF at 50V
Current - Continuous Drain (Id) at 25°C: 58.8A (Tc)
Vgs(th) (Maximum) at Id: 3.5V at 250μA
Maximum Vgs: ±20V

Power Field-Effect Transistor, Product overview: SIJ470DP-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIJ470DP-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 100V 58.8A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 58.8A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8

N-Channel 100V 58.8A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8