Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHW64N65E-GE3

The SiHW64N65E is an N-channel MOSFET designed for high-efficiency switching applications such as server and telecom power supplies, PFC circuits, and renewable energy systems. It is housed in a TO-247AD package and rated for a drain-source voltage of 650 V with a continuous drain current of 64 A at 25 °C. The device features a maximum on-state resistance of 0.047 Ω at 10 V gate-source voltage, a total gate charge of 369 nC, and an avalanche energy rating of 1800 mJ. It operates over a junction and storage temperature range of -55 °C to +150 °C. The part is lead-free and halogen-free, in compliance with Vishay's material categorization standards.