600V 47A N-Channel MOSFET TO-247AD 64mR Product overview: SIHW47N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 47A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 47A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHW47N60E-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay Siliconix
Win Source Part Number: 794401-SIHW47N60E-GE
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-3P-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Family Name: SiHW47N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-247AD
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 220nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 9620pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 357W (Tc)
Rds On (Maximum) @ Id, Vgs: 64 mOhm @ 24A, 10V
Alternative Parts (Cross-Reference): IXKH47N60CSN; IXKH47N60C; STW47NM60ND; STW36NM60ND;
Introduction Date: October 04, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
N-Channel 600V 47A (Tc) 357W (Tc) Through Hole TO-247AD
MOSFET N-CH 600V 47A TO247AD
MOSFET N-CH 600V 47A TO247AD
MOSFET 600V Vds 30V Vgs TO-247AD
MOSFET, N CHANNEL, 600V, 47A, TO-247AD-3; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:47A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):0.053OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:2.5V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Radwell International | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIHW47N60E-GE3 | 794401-SIHW47N60E-GE3 | SIHW47N60E-GE3-ND | SIHW47N60E-GE3 | SIHW47N60E-GE3 | SIHW47N60E-GE3 | 111567008 |
| Product Name | N-Channel 600V 47A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHW47N60E-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Transistor |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 357000 milliwatts | 357000 milliwatts | 357000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-3; TO-247; SOT3 | TO-3; TO-247; TO-3P-3 Full Pack | Through Hole | TO-3; TO-247; TO-3P-3 Full Pack |
