Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHW33N60E-GE3

Win Source Part Number: 1093069-SIHW33N60E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 480
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 278W (Tc)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247AD
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): FCH104N60; SIHG33N60E-GE3; SIHW30N60E-GE3; SIHG30N60E-GE3; FCH099N60E; STW45N60DM2AG; STW48N60M2SIHW33N60E-GE3.;
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHW33N60E-GE3CT-ND,SIHW33N60E-GE3CT
Base Product Number: SIHW33
Drive Voltage (Max Rds On, Min Rds On): 10V

MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS Product overview: SIHW33N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 99mOhm, 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 99mOhm, 10V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIHW33N60E-GE3 can be used for catalog matching and distributor lookup.

N-Channel 600V 33A (Tc) 278W (Tc) Through Hole TO-247AD