N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-247AD
MOSFET N-CH 600V 29A TO247AD Product overview: SIHW30N60E-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 29A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 29A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHW30N60E-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1096445-SIHW30N60E-G
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247AD
Dimension: TO-3P-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 29A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 2600pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 125 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 29A TO247AD
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHW30N60E-GE3-ND | 278-SIHW30N60E-GE3 | 1096445-SIHW30N60E-GE3 | SIHW30N60E-GE3 | SIHW30N60E-GE3 |
| Product Name | Single FETs, MOSFETs | 600V 29A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHW30N60E-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-3; TO-247; TO-3P-3 Full Pack | Tube | TO-3; TO-247; SOT3; TO-247AD | 10V | |
| MOSFET Operating Mode | Enhancement | ||||
| PD | 250 milliwatts | 250000 milliwatts |
