N-Channel 800V 5.4A (Tc) 78W (Tc) Through Hole IPAK (TO-251)
Win Source Part Number: 1277730-SIHU6N80E-GE
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: IPAK (TO-251)
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHU6
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 800V 5.4A IPAK
MOSFET 800V Vds 30V Vgs IPAK (TO-251)
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHU6N80E-GE3-ND | 1277730-SIHU6N80E-GE3 | SIHU6N80E-GE3 | SIHU6N80E-GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
