Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHU6N65E-GE3

N-Channel 650V 7A (Tc) 78W (Tc) Through Hole IPAK (TO-251)

MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS Product overview: SIHU6N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 600mOhm, 10V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 600mOhm, 10V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHU6N65E-GE3 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1277870-SIHU6N65E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: IPAK (TO-251)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHU6
Drive Voltage (Max Rds On, Min Rds On): 10V