Win Source Part Number: 1277870-SIHU6N65E-GE
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: IPAK (TO-251)
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHU6
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 7A (Tc) 78W (Tc) Through Hole IPAK (TO-251)
MOSFET, N-CH, 650V, 7A, TO-251 ROHS COMPLIANT: YES
MOSFET N-CH 650V 7A IPAK
| Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1277870-SIHU6N65E-GE3 | SIHU6N65E-GE3-ND | 26AK5812 | SIHU6N65E-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 7A, To-251 Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
