Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHU5N80AE-GE3

Description
N-Channel 800V 4.4A (Tc) 62.5W (Tc) Through Hole TO-251AA
Request a Quote Datasheet
Description
N-Channel 800V 4.4A (Tc) 62.5W (Tc) Through Hole TO-251AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 742-SIHU5N80AE-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHU5N80AE-GE3-ND
Single FETs, MOSFETs 742-SIHU5N80AE-GE3-ND
N-Channel 800V 4.4A (Tc) 62.5W (Tc) Through Hole TO-251AA

N-Channel 800V 4.4A (Tc) 62.5W (Tc) Through Hole TO-251AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1039479-SIHU5N80AE-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1039479-SIHU5N80AE-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1039479-SIHU5N80AE-GE3
Win Source Part Number: 1039479-SIHU5N80AE-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 62.5W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251AA Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SIHU5N80AE-GE3 Base Product Number: SIHU5 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1039479-SIHU5N80AE-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHU5N80AE-GE3
Base Product Number: SIHU5
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
MOSFETs - 2047228 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2047228
MOSFETs 2047228
Vishay MOSFET SIHU5N80AE-GE3

Vishay MOSFET SIHU5N80AE-GE3

Supplier's Site
MOSFETs - 2047229 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2047229
MOSFETs 2047229
Vishay MOSFET SIHU5N80AE-GE3

Vishay MOSFET SIHU5N80AE-GE3

Supplier's Site
MOSFETs - 2047229P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2047229P
MOSFETs 2047229P
Vishay MOSFET SIHU5N80AE-GE3

Vishay MOSFET SIHU5N80AE-GE3

Supplier's Site
Mosfet, N-Ch, 800V, 4.4A, To-251 Rohs Compliant Vishay - 77AH0226 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 4.4A, To-251 Rohs Compliant Vishay
77AH0226
Mosfet, N-Ch, 800V, 4.4A, To-251 Rohs Compliant Vishay 77AH0226
MOSFET, N-CH, 800V, 4.4A, TO-251 ROHS COMPLIANT: YES

MOSFET, N-CH, 800V, 4.4A, TO-251 ROHS COMPLIANT: YES

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHU5N80AE-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHU5N80AE-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHU5N80AE-GE3
MOSFET N-CH 800V 4.4A TO251AA

MOSFET N-CH 800V 4.4A TO251AA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics RS Components, Ltd. RS Components, Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 742-SIHU5N80AE-GE3-ND 1039479-SIHU5N80AE-GE3 2047228 2047229P 77AH0226 SIHU5N80AE-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFETs MOSFETs Mosfet, N-Ch, 800V, 4.4A, To-251 Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3 Ipak (to-251) IPAK TO-3 TO-251-3 Short Leads, IPak, TO-251AA
PD 62500 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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