Vishay Intertechnology, Inc. MOSFETs SIHU5N80AE-GE3

Vishay MOSFET SIHU5N80AE-GE3

Vishay MOSFET SIHU5N80AE-GE3

Vishay MOSFET SIHU5N80AE-GE3

N-Channel 800V 4.4A (Tc) 62.5W (Tc) Through Hole TO-251AA

Win Source Part Number: 1039479-SIHU5N80AE-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHU5N80AE-GE3
Base Product Number: SIHU5
Drive Voltage (Max Rds On, Min Rds On): 10V

Trans MOSFET N-CH 800V 4.4A 3-Pin(3+Tab) IPAK Product overview: SIHU5N80AE-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 4.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 4.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHU5N80AE-GE3 can be used for catalog matching and distributor lookup.