Manufacturer: Vishay
Win Source Part Number: 1096442-SIHU5N50D-GE
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-251
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 5.3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 325pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
N-Channel 500V 5.3A (Tc) 104W (Tc) Through Hole TO-251AA
TRANSISTOR POWER, FET, FET General Purpose Power Product overview: SIHU5N50D-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHU5N50D-GE3 can be used for catalog matching and distributor lookup.
MOSFET 500V Vds 30V Vgs IPAK (TO-251)
MOSFET Transistor, N Channel, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET, N-CH, 500V, 5.3A, TO-251-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, N CHANNEL, 500V, 5.3A, TO-251-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 500V 5.3A TO251
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1096442-SIHU5N50D-GE3 | SIHU5N50D-GE3-ND | 278-SIHU5N50D-GE3 | SIHU5N50D-GE3 | 63W4119 | 99W9520 | 04X9743 | SIHU5N50D-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHU5N50D-GE3 | Single FETs, MOSFETs | MOSFET Transistor | MOSFET | Mosfet Transistor, N Channel, 5.3 A, 500 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Vishay | Mosfet, N-Ch, 500V, 5.3A, To-251-3, Full Reel; Channel Type Vishay | Mosfet, N Channel, 500V, 5.3A, To-251-3; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 500 volts | |||||||
| PD | 104000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) |
