The 980462-SIHU5N50D-E3 is an N-Channel MOSFET from Win Source Electronics, designed for various applications including consumer electronics, server power supplies, and industrial uses. It features a maximum drain-source voltage (V_{DS}) of 500 V and a continuous drain current (I_{D}) of 5.3 A at a case temperature of 25 ¬8C. The on-state resistance (R_{DS(on)}) is rated at a maximum of 1.5 Oc at a gate-source voltage (V_{GS}) of 10 V and a drain current of 2.5 A. This MOSFET has a total gate charge (Q_{g}) of 20 nC, which contributes to its efficient switching performance. The device operates within a temperature range of -55 ¬8C to +150 ¬8C, making it suitable for a wide variety of environments. It is packaged in a TO-251 (IPAK) format, which is compatible with through-hole mounting. The product is also lead-free and halogen-free, aligning with modern environmental standards. Engineers considering this MOSFET for their projects should note its low input capacitance and reduced capacitive switching losses, which can enhance overall system efficiency.
N-Channel 500V 5.3A (Tc) 104W (Tc) Through Hole TO-251AA
MOSFET N-CH 500V 5.3A TO251AA Product overview: SIHU5N50D-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHU5N50D-E3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 980462-SIHU5N50D-E3
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 104W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHU5N50D-E3CT,SIHU5
Base Product Number: SIHU5
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 500V 5.3A TO251AA
MOSFET, N CHANNEL, 500V, 5.3A, TO-251-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:-RoHS Compliant: Yes
MOSFET, N-CH, 500V, 5.3A, TO-251-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET 500V Vds 30V Vgs IPAK (TO-251)
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHU5N50D-E3-ND | 278-SIHU5N50D-E3 | 980462-SIHU5N50D-E3 | SIHU5N50D-E3 | 04X9742 | 99W9519 | SIHU5N50D-E3 |
| Product Name | Single FETs, MOSFETs | 500V 5.3A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 500V, 5.3A, To-251-3; Channel Type Vishay | Mosfet, N-Ch, 500V, 5.3A, To-251-3, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | SOT3 | TO-251-3 Short Leads, IPak, TO-251AA | TO-3 | TO-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 104 milliwatts | 104000 milliwatts |
