The Vishay N-Channel MOSFET, part number SiHU4N80E, is rated for a maximum drain-source voltage (Vds) of 800V and a continuous drain current (Id) of 4.3A at a junction temperature of 150¬8C. It features a low on-resistance (Rds(on)) of 1.1Oc when tested at a gate-source voltage (Vgs) of 10V. The device has a maximum power dissipation of 69W and is designed for applications such as server and telecom power supplies, switch mode power supplies (SMPS), and industrial uses including motor drives and renewable energy systems. The MOSFET has a total gate charge (Qg) of 32nC, which contributes to reduced switching losses. It is avalanche energy rated, making it suitable for applications where transient voltage spikes may occur. The device is packaged in an IPAK (TO-251) format and is compliant with RoHS standards. Its thermal resistance ratings include a maximum junction-to-ambient resistance of 62¬8C/W, allowing for effective thermal management in various applications.
Win Source Part Number: 1277728-SIHU4N80E-GE
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 69W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: IPAK (TO-251)
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHU4
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)
MOSFET 800V Vds 30V Vgs IPAK (TO-251)
MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 800V 4.3A IPAK
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1277728-SIHU4N80E-GE3 | SIHU4N80E-GE3-ND | SIHU4N80E-GE3 | 78AC6526 | SIHU4N80E-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 800V, 4.3A, 150Deg C, 69W; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
