N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)
MOSFET, N-CH, 800V, 4.1A, 62.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.25ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes
MOSFET Nch 800V Vds 30V Vgs TO-251
MOSFET N-CH 800V 4.3A IPAK
| DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 742-SIHU4N80AE-GE3-ND | 06AH4240 | SIHU4N80AE-GE3 | SIHU4N80AE-GE3 |
| Product Name | Single FETs, MOSFETs | Mosfet, N-Ch, 800V, 4.1A, 62.5W; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
