Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHU3N50D-GE3

Description
Win Source Part Number: 1277894-SIHU3N50D-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 69W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251AA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHU3 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277894-SIHU3N50D-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHU3N50D-GE3-ND - DigiKey
    DigiKey
  • Mosfet, N Channel, 500V, 3A, To-251Aa-3; Channel Type Vishay - 08X3795 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 500V, 3A, To-251Aa-3, Full Reel; Channel Type Vishay - 99W9518 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHU3N50D-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1277894-SIHU3N50D-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 69W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251AA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHU3 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277894-SIHU3N50D-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277894-SIHU3N50D-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277894-SIHU3N50D-GE3
Win Source Part Number: 1277894-SIHU3N50D-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 69W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TO-251AA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHU3 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277894-SIHU3N50D-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 69W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHU3
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHU3N50D-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHU3N50D-GE3-ND
Single FETs, MOSFETs SIHU3N50D-GE3-ND
N-Channel 500V 3A (Tc) 69W (Tc) Through Hole TO-251AA

N-Channel 500V 3A (Tc) 69W (Tc) Through Hole TO-251AA

Buy Now Datasheet
Mosfet, N Channel, 500V, 3A, To-251Aa-3; Channel Type Vishay - 08X3795 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 500V, 3A, To-251Aa-3; Channel Type Vishay
08X3795
Mosfet, N Channel, 500V, 3A, To-251Aa-3; Channel Type Vishay 08X3795
MOSFET, N CHANNEL, 500V, 3A, TO-251AA-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 500V, 3A, TO-251AA-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 500V, 3A, To-251Aa-3, Full Reel; Channel Type Vishay - 99W9518 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 3A, To-251Aa-3, Full Reel; Channel Type Vishay
99W9518
Mosfet, N-Ch, 500V, 3A, To-251Aa-3, Full Reel; Channel Type Vishay 99W9518
MOSFET, N-CH, 500V, 3A, TO-251AA-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 500V, 3A, TO-251AA-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHU3N50D-GE3
MOSFET SIHU3N50D-GE3
MOSFET 500V Vds 30V Vgs IPAK (TO-251)

MOSFET 500V Vds 30V Vgs IPAK (TO-251)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHU3N50D-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHU3N50D-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHU3N50D-GE3
MOSFET N-CH 500V 3A TO251

MOSFET N-CH 500V 3A TO251

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277894-SIHU3N50D-GE3 SIHU3N50D-GE3-ND 08X3795 99W9518 SIHU3N50D-GE3 SIHU3N50D-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Mosfet, N Channel, 500V, 3A, To-251Aa-3; Channel Type Vishay Mosfet, N-Ch, 500V, 3A, To-251Aa-3, Full Reel; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
Unlock Full Specs
to access all available technical data