The 1140644-SIHU3N50D-E3 is an N-Channel MOSFET from Win Source Electronics, designed for various applications including consumer electronics, server and telecom power supplies, industrial welding, induction heating, motor drives, and battery chargers. It features a maximum drain-source voltage (V_{DS}) of 500 V and a continuous drain current (I_{D}) of 3 A at 25 ¬8C. The on-resistance (R_{DS(on)}) is rated at a maximum of 3.2 Oc at a gate-source voltage (V_{GS}) of 10 V and a drain current of 2.5 A. The device has a total gate charge (Q_{g}) of 12 nC, which contributes to its fast switching capabilities. It operates within a temperature range of -55 ¬8C to +150 ¬8C and has a maximum power dissipation of 69 W. The package type is TO-251, suitable for through-hole mounting. The MOSFET is characterized by low input capacitance (C_{iss}) of 175 pF at 100 V, which helps reduce switching losses. This product is compliant with lead-free and halogen-free standards, making it suitable for environmentally conscious designs.
MOSFET N-CH 500V 3A TO251AA
N-Channel 500V 3A (Tc) 69W (Tc) Through Hole TO-251AA
Win Source Part Number: 1140644-SIHU3N50D-E3
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 69W (Tc)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251AA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 175 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHU3N50D-E3CT,SIHU3
Base Product Number: SIHU3
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, 500V, 3A, TO-251AA-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, N CHANNEL, 500V, 3A, TO-251AA-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 500V 3A TO251AA
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIHU3N50D-E3 | SIHU3N50D-E3-ND | 1140644-SIHU3N50D-E3 | 99W9517 | 08X3794 | SIHU3N50D-E3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 500V, 3A, To-251Aa-3, Full Reel; Channel Type Vishay | Mosfet, N Channel, 500V, 3A, To-251Aa-3; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 500 volts | |||||
| IDSS | 3000 milliamps | 3000 milliamps | 3000 milliamps |
