Vishay Precision Group FETs - Single - SIHS36N50D-E3 SIHS36N50D-E3

Description
Manufacturer: Vishay Siliconix Win Source Part Number: 734380-SIHS36N50D-E3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SUPER-247 (TO-274AA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 446W Popularity: Low Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 36A Rds On (Maximum) at Id, Vgs: 130mOhm at 18A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 125nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 3233pF at 100V
  • FETs - Single - SIHS36N50D-E3 - 734380-SIHS36N50D-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHS36N50D-E3-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 500V, 36A, 150Deg C, 446W; Channel Type Vishay - 63W4117 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHS36N50D-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Siliconix Win Source Part Number: 734380-SIHS36N50D-E3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SUPER-247 (TO-274AA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 446W Popularity: Low Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 36A Rds On (Maximum) at Id, Vgs: 130mOhm at 18A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 125nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 3233pF at 100V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - SIHS36N50D-E3 - 734380-SIHS36N50D-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - SIHS36N50D-E3
734380-SIHS36N50D-E3
FETs - Single - SIHS36N50D-E3 734380-SIHS36N50D-E3
Manufacturer: Vishay Siliconix Win Source Part Number: 734380-SIHS36N50D-E3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: SUPER-247 (TO-274AA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 446W Popularity: Low Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 36A Rds On (Maximum) at Id, Vgs: 130mOhm at 18A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 125nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 3233pF at 100V

Manufacturer: Vishay Siliconix
Win Source Part Number: 734380-SIHS36N50D-E3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SUPER-247 (TO-274AA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 446W
Popularity: Low
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 36A
Rds On (Maximum) at Id, Vgs: 130mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 125nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 3233pF at 100V

Buy Now
Single FETs, MOSFETs - SIHS36N50D-E3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHS36N50D-E3-ND
Single FETs, MOSFETs SIHS36N50D-E3-ND
N-Channel 500V 36A (Tc) 446W (Tc) Through Hole SUPER-247™ (TO-274AA)

N-Channel 500V 36A (Tc) 446W (Tc) Through Hole SUPER-247™ (TO-274AA)

Buy Now Datasheet
Mosfet, N-Ch, 500V, 36A, 150Deg C, 446W; Channel Type Vishay - 63W4117 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 36A, 150Deg C, 446W; Channel Type Vishay
63W4117
Mosfet, N-Ch, 500V, 36A, 150Deg C, 446W; Channel Type Vishay 63W4117
MOSFET, N-CH, 500V, 36A, 150DEG C, 446W; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N-CH, 500V, 36A, 150DEG C, 446W; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHS36N50D-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHS36N50D-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHS36N50D-E3
MOSFET N-CH 500V 36A SUPER-247

MOSFET N-CH 500V 36A SUPER-247

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHS36N50D-E3
MOSFET SIHS36N50D-E3
MOSFET 500V Vds 30V Vgs Super-247

MOSFET 500V Vds 30V Vgs Super-247

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 734380-SIHS36N50D-E3 SIHS36N50D-E3-ND 63W4117 SIHS36N50D-E3 SIHS36N50D-E3
Product Name FETs - Single - SIHS36N50D-E3 Single FETs, MOSFETs Mosfet, N-Ch, 500V, 36A, 150Deg C, 446W; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts
PD 446000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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