Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHP8N50D-GE3

Description
Win Source Part Number: 968162-SIHP8N50D-GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 156W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHP8 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 968162-SIHP8N50D-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHP8N50D-GE3-ND - DigiKey
    DigiKey
  • MOSFETs - 1657113 - RS Components, Ltd.
    RS Components, Ltd.
  • Mosfet, N Channel, 500V, 8.7A, To-220Ab-3; Channel Type Vishay - 08X3793 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet, N-Ch, 500V, 8.7A, To-220Ab-3, Full Reel; Channel Type Vishay - 99W9515 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP8N50D-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 968162-SIHP8N50D-GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 156W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHP8 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 968162-SIHP8N50D-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
968162-SIHP8N50D-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 968162-SIHP8N50D-GE3
Win Source Part Number: 968162-SIHP8N50D-GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 156W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHP8 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 968162-SIHP8N50D-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 527 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHP8
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHP8N50D-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHP8N50D-GE3-ND
Single FETs, MOSFETs SIHP8N50D-GE3-ND
N-Channel 500V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB

N-Channel 500V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB

Buy Now Datasheet
MOSFETs - 1657113 - RS Components, Ltd.
RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1657113
MOSFETs 1657113
MOSFET N-Ch 500V 8.7A Low Cap. TO220AB

MOSFET N-Ch 500V 8.7A Low Cap. TO220AB

Supplier's Site
Mosfet, N Channel, 500V, 8.7A, To-220Ab-3; Channel Type Vishay - 08X3793 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 500V, 8.7A, To-220Ab-3; Channel Type Vishay
08X3793
Mosfet, N Channel, 500V, 8.7A, To-220Ab-3; Channel Type Vishay 08X3793
MOSFET, N CHANNEL, 500V, 8.7A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

MOSFET, N CHANNEL, 500V, 8.7A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Mosfet, N-Ch, 500V, 8.7A, To-220Ab-3, Full Reel; Channel Type Vishay - 99W9515 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 8.7A, To-220Ab-3, Full Reel; Channel Type Vishay
99W9515
Mosfet, N-Ch, 500V, 8.7A, To-220Ab-3, Full Reel; Channel Type Vishay 99W9515
MOSFET, N-CH, 500V, 8.7A, TO-220AB-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:156W; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 500V, 8.7A, TO-220AB-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:156W; MSL:- RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHP8N50D-GE3
MOSFET SIHP8N50D-GE3
MOSFET 500V Vds 30V Vgs TO-220AB

MOSFET 500V Vds 30V Vgs TO-220AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHP8N50D-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHP8N50D-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHP8N50D-GE3
MOSFET N-CH 500V 8.7A TO220AB

MOSFET N-CH 500V 8.7A TO220AB

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. Newark, An Avnet Company Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 968162-SIHP8N50D-GE3 SIHP8N50D-GE3-ND 1657113 08X3793 99W9515 SIHP8N50D-GE3 SIHP8N50D-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFETs Mosfet, N Channel, 500V, 8.7A, To-220Ab-3; Channel Type Vishay Mosfet, N-Ch, 500V, 8.7A, To-220Ab-3, Full Reel; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel N-Channel
PD 156000 milliwatts 156000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; To-220ab TO-3; TO-220 TO-3; TO-220 TO-220; TO-220-3
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