Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHP7N60E-BE3

N-channel MOSFET in TO-220AB package rated for 600 V drain-source voltage, 7 A continuous drain current at 150 °C, and 78 W maximum power dissipation. Features a maximum on-state resistance of 0.6 Ω at 10 V gate-source voltage, total gate charge of 40 nC, and single pulse avalanche energy of 43 mJ. Designed for switch mode power supplies, power factor correction, and industrial applications including motor drives and solar inverters.